MULTICOMP 2N2222 Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 800 mA, 100 hFE Panel Instrumentation Slew Rate 2V/µs Supply Voltage
Baker’s notes & crumb story
Description
Slew Rate 2V/µs Supply Voltage Range 2
Material Aluminum Sections 4 Minimum Length 30" (76
Comparable APS-C Focal Length: 21 mm Aperture Maximum: f/2
8kg) Packaging Info Package Weight 1
6 cm) Size 44" x 40' (111
MULTICOMP 2N2222 Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 800 mA, 100 hFE Panel Instrumentation Slew Rate 2V/µs Supply VoltageThe 2N2222 from Multicomp is a through hole, silicon planar NPN low power bipolar transistors in TO 18 metal can package. This transistor is used for switching, linear DC power supply and VHF amplifier applications. Collector emitter voltage (Vce) of 30V Continuous collector current (Ic) of 800mA Power dissipation of 500mW Operating junction temperature range from 65C to 200C Collector emitter saturation voltage of 1. 6V at 500mA collector current DC